For Reference Only
Part Number | DMG3415UFY4Q-7 |
Manufacturer | Diodes Incorporated |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
Description | MOSFET P-CH 16V 2.5A X2-DFN2015 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | DMG3415UFY4Q-7 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Dec 24 - Dec 28 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | DMG3415UFY4Q-7 |
Brand: | Diodes Incorporated |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | Diodes Incorporated |
Product Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 16 V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 39mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 10 nC @ 4.5 V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 282 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 650mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | X2-DFN2015-3 |
Package / Case: | 3-XDFN |
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In Stock | 30572 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
Qty. | Unit Price | Ext. Price |
---|---|---|
3000 | $0.17631 | $528.93 |
6000 | $0.16669 | $1000.14 |
15000 | $0.15706 | $2355.9 |
30000 | $0.14551 | $4365.3 |
75000 | $0.14070 | $10552.5 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
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