DDTC114ELP-7

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Part Number	DDTC114ELP-7
Manufacturer	Diodes Incorporated
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Single, Pre-Biased
Description	TRANS PREBIAS NPN 250MW 3DFN
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	DDTC114ELP-7 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Sep 21 - Sep 25 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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DDTC114ELP-7 Specifications

Part Number:	DDTC114ELP-7
Brand:	Diodes Incorporated
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer:	Diodes Incorporated
Product Status:	Active
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	50 V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 10mA, 70mA
Current - Collector Cutoff (Max):	1µA
Frequency - Transition:	250 MHz
Power - Max:	250 mW
Mounting Type:	Surface Mount
Package / Case:	3-UFDFN
Supplier Device Package:	X1-DFN1006-3

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