Description:

The Texas Instruments CSD88539NDT is a dual N-channel MOSFET designed for a variety of applications. It is a lead-free and RoHS compliant product that offers high performance and reliability. The CSD88539NDT is an ideal solution for applications that require high power and efficiency.

Features:

• Dual N-Channel MOSFET: The CSD88539NDT is a dual N-channel MOSFET that provides high power and efficiency.
• Logic Level Gate: The CSD88539NDT has a logic level gate, providing easy integration with other digital systems.
• High Drain to Source Voltage: The CSD88539NDT has a high drain to source voltage of 60V, making it suitable for high voltage applications.
• High Continuous Drain Current: The CSD88539NDT has a high continuous drain current of 15A, providing strong output signals.
• Low Rds On: The CSD88539NDT has a low Rds On of 28mOhm at 5A and 10V, providing efficient operation.