Description:

The IPN80R3K3P7ATMA1 is an N-Channel MOSFET designed by Infineon Technologies. This MOSFET features a high voltage rating of 800V and low on-resistance, making it ideal for use in power applications. It is a surface mount device with a PG-SOT223 package and is suitable for use in a variety of applications.

Features:

The IPN80R3K3P7ATMA1 is an N-Channel MOSFET that is designed to provide high voltage and low on-resistance. It has a drain to source voltage rating of 800V and a continuous drain current rating of 1.9A at 25°C. The MOSFET has a low on-resistance of 3.3Ohm at 590mA and 10V, making it suitable for use in power applications.

The IPN80R3K3P7ATMA1 is suitable for use in a wide range of applications, including power supplies, motor control, and lighting. It is also suitable for use in applications that require high voltage and low on-resistance, such as in industrial and automotive applications.

Product Performance:

The IPN80R3K3P7ATMA1 is a high-performance N-Channel MOSFET that provides reliable and efficient power switching. It has a high voltage rating of 800V and a low on-resistance of 3.3Ohm at 590mA and 10V, making it suitable for use in power applications.

The MOSFET has a gate charge of 5.8 nC at 10V, making it suitable for use in applications that require fast switching speeds. It has a maximum operating temperature of -55°C to 150°C, making it suitable for use in a wide range of environments.

Conclusion:

The IPN80R3K3P7ATMA1 is an N-Channel MOSFET designed by Infineon Technologies. It features a high voltage rating of 800V and low on-resistance, making it ideal for use in power applications. The MOSFET's low on-resistance and high voltage rating make it suitable for use in a wide range of applications, including power supplies, motor control, and lighting. Its gate charge and maximum operating temperature make it suitable for use in applications that require fast switching speeds and can operate in a wide range of environments.